%I Trans Tech Publications, Switzerland
%J Materials Science Forum
%D 2019
%V 896
%T The Characterization of Semiconductor Crystal Sn(Se0.8Te0.2) Prepared by Bridgman Technique for Solar Cell
%R https://doi.org/10.4028/www.scientific.net/MSF.948.279
%P 279-286
%L UNY64039
%K Semiconductor, Crystal Sn(Se0.8Te0.2), Bridgman Technique
%X These study aims determine the characterization of structure and chemical composition of crystal Sn(Se0.8Te0.2). The growth of crystal Sn(Se0.8Te0.2) is obtained by preparation outcome through Bridgman Technique. Hence, characterized by using the XRD (X-Ray Diffraction) for to determine the crystal structure, SEM (Scanning Electron Microscopy) to determine the surface morphology, and EDAX (Energy Dispersive Analysis of X-ray) to determine the chemical composition. The four samples are characterized results indicate that crystal Sn(Se0.8Te0.2) has orthorhombic structure with the results of the samples I and III have the highest intensity. SEM characterization result for sample I and III indicate that the formation of crystal Sn(Se0.8Te0.2) is characterized by the presence of grains. Based on the results of EDAX, it is known that the crystal Sn(Se0.8Te0.2) contains elements of Sn, Se, and Te with a percentage of the chemical composition of the sample I is Sn = 39.85%, Se = 36.09%, and Te = 2.57 %. Comparison the molarity of the sample I is Sn: Se: Te is 1: 0.90: 0.10.
%A Anggraini Kumala Dewi
%A Ariswan Ariswan