eprintid: 11529 rev_number: 6 eprint_status: archive userid: 3 dir: disk0/00/01/15/29 datestamp: 2014-11-07 04:27:53 lastmod: 2014-11-07 04:27:55 status_changed: 2014-11-07 03:50:51 type: article metadata_visibility: show creators_name: Esmar, Budi title: MODELING OF REACTIVE MAGNETRON SPUTTERING IN TIALN FILM DEPOSITION: ANALYSIS OF PUMPSPEED AND TARGET CURRENT EFFECT ispublished: submitted subjects: KIM14 divisions: fmipa_jurdik_fisika_fisika full_text_status: public keywords: Mathematical model, reactive magnetron sputtering, TiAlN films, pump speed, target current, nitrogen flow rate. abstract: A model of reactive magnetron sputtering has been developed by using mathematic model. The effect of high pump speed pump and target current in TiAlN coating deposition were studied. The results showed that high pump speed and target current increase the critical nitrogen flow rate in achieving stoichiometery of TiAlN coating composition. The opertion of high pump speed eliminated the hysteris effect, while high target current did not affect to the process. date: 2014-05 date_type: submitted publication: Proceeding of International Conference On Research, Implementation And Education Of Mathematics And Sciences 2014 publisher: Yogyakarta State University refereed: TRUE referencetext: 1. Ahmad, Z. and Abdallah, B. (2013). Controllability Analysis of Reactive Magnetron Sputtering Process. ACTA PHYSICA POLONICA A Vol. 123, pp. 1-6. 2. Berg, S. and Nyberg, T. (2005) „Fundamental understanding and modeling of reactive sputtering processes‟, Thin Solid Film, Vol. 476, pp.215–230. 3. Kadlec, S., Musil, J., Vyskocil, H. (1986). Hysteresis Effect in Reactive Sputtering: A Problem of System Stability. Journal of Physics D: Applied Physics, Vol. 19, pp. L187-L190. 4. Nadel, S.J., Greene, P., Rietzel, J., Strumpfel, J. (2003). Equipment, materials and processes: a review of high rate sputtering technology for glass coating. Thin Solid Films Vol. 442, pp. 11–14. 5. Gyorgy, K., Kelemen, A., Papp, S., Jakab-Farks, L. Theoretical Study of the Gradient Method to Find the Optimal Control for the Reactive Sputtering Process. Acta Universitatis Sapientiae Electrical and Mechanical Engineering, 3 (2011) 82-92. 6. Knizikevičius, R. (2010). Simulation of reactive sputter deposition of TiO2 films (ISSN: 1392–1320. Materials Science (Medžiagotyra). Vol. 16, no. 3. 7. [4]Esmar Budi Mohd. Razali Bin Muhamad, Saifudin Hafiz Bin Yahaya and Md. Nizam Bin Abdul Rahman .(2011). Model of reactive sputtering process in deposition of TiAlN coating. Int. J. Materials Engineering Innovation, Vol. 2, No. 1, pp. 71-95. 8. Shew, B.Y., Huang, J.L., Lii, D.F. (1997). Effects of R.F. Bias and Nitrogen Flow Rates on the Reactive Sputtering of TiAlN Films. Thin Solid Films, Vol. 293, pp. 212-219. 9. Berg, S., Nyberg, T. (2005). Fundamental Understanding and Modeling of Reactive Sputtering Process. Thin Solid Film, Vol. 476, pp. 215-230. 10.Heuvelman, W.M., Helderman, P., Janssen, G.C.A.M., Radelaar, S. (1998). TiN reactive sputter deposition studied as a function of the pumping speed Thin Solid Films 332, pp. 335-339. 11.Depla, D., De Gryse, R. (2004). Target poisoning during reactive magnetron sputtering: Part III: the prediction of the critical reactive gas mole fraction Surface and Coatings Technology 183, pp. 196–203. citation: Esmar, Budi (2014) MODELING OF REACTIVE MAGNETRON SPUTTERING IN TIALN FILM DEPOSITION: ANALYSIS OF PUMPSPEED AND TARGET CURRENT EFFECT. Proceeding of International Conference On Research, Implementation And Education Of Mathematics And Sciences 2014. (Submitted) document_url: http://eprints.uny.ac.id/11529/1/04-Esmar%20Budi.rtf